4.6 Article

Ultraviolet photon counting with GaN avalanche photodiodes

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APPLIED PHYSICS LETTERS
卷 76, 期 26, 页码 3938-3940

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AMER INST PHYSICS
DOI: 10.1063/1.126827

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Photon counting, utilizing Geiger-mode avalanche response, has been demonstrated at 300 K in avalanche photodiodes fabricated in GaN grown by hydride vapor-phase epitaxy. Measurements have been made using both passive-quench and time-gated modes of operation. The two important figures of merit for photon-counting applications, photon detection efficiency (PDE) and dark count rate, were measured. A maximum PDE of 13% was measured at 325 nm with a dark count rate of 400 kHz. Typical mesa-etched devices exhibit a parasitic shunt leakage current of less than 20 nA at 90% of breakdown voltage. (C) 2000 American Institute of Physics. [S0003-6951(00)03126-0].

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