Transport properties of Bi nanowire arrays

To explain various temperature-dependent resistivity measurements [R(T)] on bismuth (Bi) nanowires as a function of wire diameter down to 7 nm, a semiclassical transport model is developed, which explicitly considers anisotropic and nonparabolic carriers in cylindrical wires, and the relative importance of various scattering processes. R(T) of 40 nm Bi nanowires with various Te dopant concentrations is measured and interpreted within this theoretical framework. (C) 2000 American Institute of Physics. [S0003-6951(00)03026-6].