期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 18, 期 4, 页码 2016-2020出版社
AMER INST PHYSICS
DOI: 10.1116/1.1305809
关键词
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Thin films of inert, refractory materials are used in semiconductor interconnect applications as diffusion barriers, seed, and adhesion layers. A typical example is the use of a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectric. Atomic layer deposition is a known technique which is intrinsically conformal and is appropriate far this application. Plasma enhancement of the process allows deposition at significantly lower temperatures than conventional chemical vapor deposition, which is a requirement for low-k dielectrics. Tantalum films deposited at 25-400 degrees C using ALD with a TaCl5 precursor and atomic hydrogen as the reactive species at up to a rate of 1.67 Ang/cycle are amorphous, conformal, and show moderate or controllable levels of impurities: primarily oxygen and a small level of Cl. Similar results have been observed for Ti using TiCl4, as a precursor. The process scales to manufacturing dimensions and applications and will facilitate the extension of interconnect technology beyond (below) 100 nm dimensions. (C) 2000 American Vacuum Society. [S0734-211X(00)05204-5].
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