期刊
PHYSICAL REVIEW B
卷 62, 期 2, 页码 1167-1170出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.62.1167
关键词
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The magnetic anisotropy and the lattice relaxation of epitaxial Fe films grown on InAs(100)-4 X 2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction. The experimental results demonstrate that the symmetry breaking associated with the intrinsic atomic scale structure of the reconstructed semiconductor surface induces an in-plane anisotropic lattice relaxation and an in-plane uniaxial magnetic anisotropy in the ultrathin region. We propose that this is a general phenomenon in ferromagnetic/semiconductor heterostructures.
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