Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Radio-frequency (rf)-operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (similar to 0.1 pA). (C) 2000 American Institute of Physics. [S0003-6951(00)00130-3].