期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 77, 期 1, 页码 110-114出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0921-5107(00)00477-3
关键词
indium tin oxide; RF magnetron sputtering; preferential orientation changes; electrical properties; optical properties
Indium tin oxide films have been deposited by RF magnetron sputtering technique. Discharge power density has been varied from 0.36 to 2 W cm(-2) and pure argon or argon/oxygen mixture have been utilised as sputtering gas. Substrate temperature has been kept at 250 degrees C for all the samples. Film's crystallisation behaviour has been investigated as a function of RF power density. XRD analysis revealed a change in preferential orientation of polycrystalline crystalline structure from (222) to (400) plane with the increase in RF power. Crystallite size was found to increase with the RF power. EPMA analysis revealed a higher O/In ratio in the [111] oriented samples than in the [100] oriented ones. In/Sn ratio, evaluated by ICP analysis, decreased with the increase in RF power and with the change of sputtering gas from pure Ar to Ar/O-2 mixture. Optical band gap was found continuously decreasing with the increase in RF power. Hall effect measurement showed the influence of high deposition power on the electron mobility degradation. A very low electrical resistivity of 8.6 x 10(-5) Ohm cm(-1) was achieved during this investigation. A close correlation between the preferential orientation and film properties has been pointed out. (C) 2000 Elsevier Science S.A. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据