Temperature dependence of capacitance/current-voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

Highly (0001)-oriented YMnO3 thin films on Si(100) substrates were obtained by using a stable precursor solution and rapid thermal annealing at a low temperature of 650 degrees C in a chemical solution deposition process. Temperature-dependent capacitance-voltage (C-V) and current-voltage (I-V) characteristics were discussed in a metal-ferroelectric-semiconductor structure. At 300 K, the voltage-dependent increase of the memory window (Delta V) in the C-V curve and the asymmetric I-V curve were attributed to the formation of positive interfacial charges by field- and thermal-excited electron transport. On the other hand, at 220 K, the voltage-independent Delta V was attributed to ferroelectric polarization switching. (C) 2000 American Institute of Physics. [S0003-6951(00)04633-7].