期刊
PHYSICAL REVIEW LETTERS
卷 85, 期 11, 页码 2364-2367出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.85.2364
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The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
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