Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p-i-n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4-1.5 mu m wavelength. The electroluminescence is observed up to room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)00437-X].