期刊
APPLIED PHYSICS LETTERS
卷 77, 期 13, 页码 1949-1951出版社
AMER INST PHYSICS
DOI: 10.1063/1.1311953
关键词
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Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N-2, and H-2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)00839-1].
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