期刊
APPLIED PHYSICS LETTERS
卷 77, 期 13, 页码 2009-2011出版社
AMER INST PHYSICS
DOI: 10.1063/1.1312199
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Surfaces of reactively evaporated In2O3 films were investigated in situ by synchrotron-excited photoemission. Work function, valence band maximum, and electronic states in the band gap were determined as a function of oxygen pressure. Surface and bulk electronic properties can only be explained consistently with the assumption of a surface depletion layer. (C) 2000 American Institute of Physics. [S0003-6951(00)01339-5].
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