期刊
APPLIED PHYSICS LETTERS
卷 77, 期 13, 页码 2024-2026出版社
AMER INST PHYSICS
DOI: 10.1063/1.1290492
关键词
-
The valence band offset between 4H-, 6H-SiC, and grown-on thermal oxide is directly measured using internal photoemission of holes. The obtained value Delta E-V=2.9 +/- 0.1 eV in combination with the earlier reported barrier for valence electrons yields an oxide band gap width of 8.9 eV, close to the intrinsic value for amorphous SiO2 which suggests an abrupt SiC/SiO2 interface. Hole tunneling from SiC into SiO2 is mediated by oxide defect states distributed in an energy range of similar to 1 eV above the SiO2 valence band. (C) 2000 American Institute of Physics. [S0003-6951(00)00436-8].
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据