期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 61, 期 10, 页码 1607-1622出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0022-3697(00)00020-2
关键词
wurtzite structure; defects; transport properties; conduction pathways; stacking faults
The defect chemistry and d.c. transport characteristics of beta-AgI are reconsidered by taking into account (i) two structurally different interstitial positions, (ii) short-range interactions via associations, (iii) anisotropy of the wurtzite structure, (iv) long-range defect-defect interactions via Coulomb forces, and (v) formation of highly conducting layers perpendicular to the c-axis via a disordered interface structure with stacking faults. Besides microstructural characterization the analysis relies on the ionic conductivity data by impedance spectroscopy with conventional as well as micro-electrodes, and utilizes recent reports on the defect concentration and defect energies of beta-AgI by molecular dynamics simulations and on AgI:Al2O3 composites. Static valence sum calculations were performed to elucidate the ion conduction pathways and related migration barriers. (C) 2000 Elsevier Science Ltd. All rights reserved.
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