Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition

Pb(Zr, Ti)O-3 (PZT) thin films with Zr/(Zr + Ti) of 0.42 were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 620 degreesC by metalorganic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in simultaneous improvements of the crystallinity, surface roughness and electrical properties of the PZT film by this preparation method. The (111)-orientation increased and the surface roughness decreased. Moreover, the leakage decreased and well-saturated symmetrical polarization-electric field (P-E) hysteresis loop were obtained. Remanent polarization (P-r) and the coercive field (E-c) values of this pulse-MOCVD film were 44 muC/cm(2) and 85 kV/cm, respectively.