期刊
PHYSICAL REVIEW LETTERS
卷 85, 期 14, 页码 2953-2956出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.85.2953
关键词
-
We describe how cross-sectional scanning tunneling microscopy (STM) may be used to image the interfacial bonding across the nearly lattice-matched, non-common-atom GaSb/InAs heterojunction with atomic-scale precision. The method, which takes advantage of the length difference between interfacial and bulk bonds, appears equally applicable to AlSb/InAs and suggests how one might recover the complete structure of either heterojunction from atomic-resolution STM data.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据