期刊
APPLIED SURFACE SCIENCE
卷 166, 期 1-4, 页码 508-512出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(00)00484-0
关键词
Fermi level; Cu(In,Ga)Se-2 semiconductors; defect formation
A removal of Cu from the surface is observed when the Fermi level moves upwards in the bandgap of Cu(In,Ga)Se, semiconductors during contact formation. A model based on a comparison of band edge energies and electrochemical redox energies is proposed, which qualitatively explains the observations and might be used as a simple rule for predicting similar defect formation processes. (C) 2000 Elsevier Science B.V. All rights reserved.
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