InP/lnGaAs uni-travelling-carrier photodiode with 310GHz bandwidth

The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3dB bandwidth of 310GHz and a pulse width (FWHM) of 0.97ps, both of which are record values for photodetectors operating at a wavelength of 1.55 mum. The average electron velocity in the depletion region is estimated to be 3.0 x 10(7)cm/s.