期刊
APPLIED PHYSICS LETTERS
卷 77, 期 19, 页码 3021-3023出版社
AMER INST PHYSICS
DOI: 10.1063/1.1322633
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We have observed a significant reduction in the temperature dependence of the absorption-edge energy in GaNxAs1-x alloys with x <0.04. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption-edge energy. We also compare the parameters that determine the temperature dependence of the band-gap energies in GaNAs and GaInNAs alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)00545-3].
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