期刊
JOURNAL OF APPLIED PHYSICS
卷 88, 期 10, 页码 5760-5763出版社
AMER INST PHYSICS
DOI: 10.1063/1.1320026
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The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effectively screen both the free exciton and bound exciton transitions, resulting in a blueshift. The increased number of free electrons also produces many-body effects, which lead to a reduction of the band gap energy and thus a redshift. The resultant of screening and renormalization results in a redshift of the optical transitions in ZnO but a nearly vanishing shift in GaN. (C) 2000 American Institute of Physics. [S0021-8979(00)05123-9].
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