期刊
PHYSICAL REVIEW B
卷 62, 期 19, 页码 12963-12977出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.62.12963
关键词
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We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens-shaped InAs quantum dots within the linear combination of bulk bands method. We present a detailed comparison with experiment, including quantites such as the single-particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole, and electron-hole Coulomb energies and the optical polarization anisotropy. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.
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