期刊
APPLIED PHYSICS LETTERS
卷 77, 期 21, 页码 3400-3402出版社
AMER INST PHYSICS
DOI: 10.1063/1.1326838
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Diamond anvils with diamond encapsulated thin-film microcircuits have been fabricated for ultrahigh pressure electrical conductivity experiments. The diamond films were homoepitaxially deposited onto the diamond anvil substrates with microwave plasma chemical vapor deposition using a 2% methane in hydrogen gas mixture and a diamond substrate temperature of 1300 degreesC. The diamond embedded thin-film microprobes remain functional to megabar pressures. We have applied this technology to the study of the pressure-induced metallization of KI under pressures up to 1.8 Mbar. This technology has the potential of greatly advancing the pressure range of a number of existing high-pressure diagnostic techniques, and for expanding the capabilities of diamond anvil cells into new directions. (C) 2000 American Institute of Physics. [S0003-6951(00)00347-8].
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