期刊
APPLIED PHYSICS LETTERS
卷 77, 期 21, 页码 3349-3351出版社
AMER INST PHYSICS
DOI: 10.1063/1.1327281
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Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide-silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50-70 GPa depending on the size of the nanowire. (C) 2000 American Institute of Physics. [S0003-6951(00)02347-0].
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