期刊
PHYSICAL REVIEW LETTERS
卷 85, 期 21, 页码 4562-4565出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.85.4562
关键词
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We show how cross-sectional scanning tunneling microscopy may be used to reconstruct the Sb segregation profiles in GaInSb/InAs strained-layer superlattices. These profiles are accurately described by a one-dimensional model parametrizing the spatial evolution of an Sb seed at the InAs-on-GaInSb interface in terms of two-anion-layer exchange. We argue that the segregation seed, which decreases from 2/3 to 1/2 monolayer when growth conditions are made less anion rich, has its origin in the Sb-bilayer reconstruction maintained during GaInSb epitaxy.
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