7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

A fast high-power solid-state switch based on a novel large periphery multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1mm periphery and 10 mum gate-drain spacing, 7.5kW/mm(2) of switched power with on-state resistance of 75mW x mm(2) is obtained. The pulse response of the MOSHFET switch exhibited a rise-time < 5ns in pulsemode operation.