Nano-patterning of polythiophene derivatives containing electron transporting moiety by using AFM lithography

We report on nanolithography of polythiophene derivatives using an atomic force microscope (AFM) as an exposure tool. These films were prepared using a spin-coating method and a Langmuir-Blodgett method. Then, they were patterned through localized degradation as a result of anodic reactions induced beneath the AFM tip. Novel polythiophene derivatives were synthesized by directly introducing an electron-transporting moiety on the side chain that can accept electrons efficiently. We accomplished the anodization of polythiophene derivatives under various conditions and obtained a pattern with a high resolution of 50 nm line-width. This result indicates that AFM anodization of polythiophene derivatives was accomplished well because of an efficient electron-accepting property.