期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
卷 39, 期 12A, 页码 6496-6500出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.39.6496
关键词
4H-SiC; micropipe; elementary screw dislocation; micropipe closing; structural transformation; epitaxial growth
In this paper? we studied the structural transformation of screw dislocations through gas-phase 4H-SiC epitaxial growth. We confirmed based on the numbers and features of etch pits on a surface after KOH treatment that some micropipes were closed in the epitaxial layer, and were divided into several elementary screw dislocations. We discuss the magnitude of Burgers vectors of micropipes in 4H-SiC substrates in relation to the number of elementary screw dislocations generated by micropipe closing. A depth analysis further revealed that most micropipe closings tool; place in the initial stage of epitaxial growth.
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