期刊
JOURNAL OF CRYSTAL GROWTH
卷 221, 期 -, 页码 267-270出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(00)00697-7
关键词
Mg-doped InGaN; hole concentration; MOVPE; p-type conductivity
We investigated the electrical properties of Me-doped InxGa1-xN (0 less than or equal to x < 0.75) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 10(18)cm(-3) and obtained the maximum hole concentration of 7.8 x 10(18) cm (-3) for x = 0.2 by optimizing the growth conditions. (C) 2000 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据