Full color light emission from amorphous SiCx:H with organic-inorganic structures

Hydrogenated amorphous silicon carbide films with an organic-inorganic compound structure were fabricated by using organic carbon source xylene (C8H10), in a traditional radio frequency plasma-enhanced chemical vapor deposition system. Strong full-color light emission ranging from 630 to 420 nm was observed at room temperature. The results of photoluminescence and photoluminescence excitation experiments showed the emission was originated from the radiative recombination at band tails of the inorganic SiC matrix. Moreover, luminescence from the transition between discrete energy levels, which were associated with organic pi -conjugated carbon systems, was also observed at resonant excitation conditions. (C) 2000 American Institute of Physics. [S0021-8979 (00)05624-3].