期刊
JOURNAL OF CRYSTAL GROWTH
卷 221, 期 -, 页码 301-304出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(00)00704-1
关键词
conducting buffer; GaN; AlGaN; SiC; graded; MOCVD
GaN films on top of doped, graded AlGaN conducting buffer layers were grown by metal-organic chemical vapor deposition on n(+) SiC substrates. The effect of initial AlGaN composition and buffer layer doping level on the structural and morphological properties of these films and the conduction between these films and the substrate was investigated. A minimum resistance of 2 Omega was measured for vertical test structures, (C) 2000 Elsevier Science B.V. All rights reserved.
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