A novel mechanism for spin dephasing due to spin-conserving scatterings

A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this: inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spill dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.