期刊
APPLIED PHYSICS LETTERS
卷 77, 期 23, 页码 3776-3778出版社
AMER INST PHYSICS
DOI: 10.1063/1.1329634
关键词
-
Field-effect transistors based on single crystalline perylene have been prepared and analyzed in the temperature range from 50 to 300 K. Room temperature electron mobilities as high as 5.5 cm(2)/V s have been achieved. In addition, ambipolar device operation, i.e., n- and p-channel activity, is observed. The temperature dependence of the electron and hole mobilities is discussed in the limits of hopping and band-like transport mechanisms. (C) 2000 American Institute of Physics. [S0003-6951(00)00749-X].
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据