期刊
APPLIED PHYSICS LETTERS
卷 77, 期 23, 页码 3812-3814出版社
AMER INST PHYSICS
DOI: 10.1063/1.1328373
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We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the ((1) over bar 101)MnAs and (001) ZnSe planes are parallel. Single-phase type-B alpha MnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01248-1].
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