期刊
PHYSICAL REVIEW B
卷 62, 期 23, 页码 15390-15393出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.62.15390
关键词
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We study the evolution of the absorption spectrum of a modulation-doped GaAs/AlxGa1-xAs semiconductor quantum well with decreasing the carrier density. We find that at some critical electron density there is a sharp change in the line shape and the transitions energies of the exciton peaks. We show that this critical density marks an abrupt transition from a simple excitonic behavior to a Fermi edge singularity.
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