Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors

Accurate determination of trap density in the active region of mid-infrared narrow-bandgap detectors is crucial in the development towards background-limited performance at higher operating temperatures. We have used both optical and electrical measurements to determine the trap density in InSb/InAlSb nonequilibrium detector structures. Both of these techniques result in very good agreement with trap densities of 5 x 10(14) cm(-3).