期刊
THIN SOLID FILMS
卷 380, 期 1-2, 页码 32-35出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(00)01465-6
关键词
germanium; silicium; carbon; RHEED; AFM; growth mode
Strong Ge morphological modifications were observed upon an ordered C-pre-covered Si(001)-c(4 x 4) reconstructed surface used as a template as compared to the growth on bare Si(001)-(2 x 1) substrates. While on bare substrates, the Ge wetting layer of the Stranski-Krastanov mode has a critical thickness of approximately 3-4 monolayers (ML), with the c-(4 x 4) template, island nucleation already occurs after 1 Ge ML and growth proceeds in a Volmer-Weber mode. This suggests that the C-rich surface derm associated with the c-(4 x 4) reconstruction is able to strongly affect the Ge wetting. (C) 2000 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据