Electron spectrum of magnetic interface structures based on narrow-gap semiconductors -: art. no. 035317

In this work we deal with magnetic junction structures in which a homogeneous narrow-gap semiconductor is subjected to an inhomogeneous magnetic field. The aim of the paper is to elucidate magnetic field effects on the electron energy spectrum of narrow-gap semiconductors in inhomogeneous magnetic fields. The two-band Dirac model is used as a model Hamiltonian. Spectra and wave functions for the magnetic junction are obtained. Wave functions for the lowest quasi Landau levels rue strongly localized near the interface plane showing the characteristic properties of snake orbits. The spin properties of the quasi Landau levels an studied.