期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 40, 期 1AB, 页码 L41-L42出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.L41
关键词
pulsed laser deposition (PLD); laser ablation; silicone; SiO2 thin film; ArF excimer laser; infrared spectroscopy; transparency; room temperature
We deposited SiO2 thin films at room temperature by 193-nm ArF excimer laser ablation of silicone rubber in oxygen atmosphere. (Si-O)(n) chains were selectively ejected from silicone rubber targets by ablation in high laser fluence at about 10 J/cm(2). Oxygen gas worked To oxidize the ejected (Si-O)(n) chains to form SiO2 thin films at the gas pressure of 4.4 x 10(-2) Torr, in addition to reducing the isolated carbon mixed into the films. The transmittance of the 400-nm-thick films was 95% at a 500 nm wavelength. The refractive index of the films was defined as 1.4 to 1.5.
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