期刊
JOURNAL OF CRYSTAL GROWTH
卷 223, 期 1-2, 页码 83-91出版社
ELSEVIER
DOI: 10.1016/S0022-0248(00)01017-4
关键词
crystal morphology; doping; metalorganic chemical vapor deposition; nitrides; semiconducting gallium compounds; light emitting diodes
We have studied the effect of a low-temperature-deposited (LT-) AlGaN interlayer on AlGaN/GaN heterostructure. High-crystalline-quality and crack-free AlGaN layers covering the entire compositional range were realized using the LT-AIN interlayer. We also showed that AlGaN is applicable as the LT-interlayer under the condition that the AlN molar fraction of the LT-AlGaN interlayer is equal to or larger than that of the overgrown,AlGaN layer. Furthermore, electrically conductive LT-Al0.1Ga0.9N has been realized with an intermediate deposition temperature and very high SiH4 flow rate, in addition to the high-quality overgrown AlGaN layer, It is thought that the LT-interlayer technology call overcome the challenges of glowing a high-quality AlGaN layer with high AlN mole fraction on GaN layers. (C) 2001 Published by Elsevier Science B.V.
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