期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 48, 期 2, 页码 285-288出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.902728
关键词
modeling; MOS capacitors; simulation; stress-induced leakage current; ultrathin SiO2
A new quantitative model of the stress induced leakage current (SILC) in MOS capacitors with thin oxide layers has been developed by assuming the inelastic trap-assisted tunneling as the conduction mechanism. The oxide band structure has been simplified by replacing the trapezoidal barrier with two rectangular barriers. An excellent agreement between simulations and experiments has been found by adopting a trap distribution Gaussian in space and in energy. Only minor variations pf the trap distribution parameters were observed by increasing the injected charge during electrical stress, indicating that oxide neutral defects with similar characteristics are generated at any stage of the stress.
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