Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

Silicon-on-insulator (SOI) structures were fabricated by bonding using a new Variant of Smart-Cut technology. Asbonded SOI structures are annealed at high temperature (1100 degreesC) for removal of hydrogen, radiation defects and stresses at the bonding interface. The transformation of structural parameters in as-bonded and annealed SOI structures was investigated by high-resolution X-ray diffraction. The large strain observed for as-bonded SOI structures is relaxed during annealing at high temperature and final SOI wafer has strain-free top silicon layer due to defect annealing and Viscous flow of SiO(2), FWHM value for SOI film is higher than that for typical silicon single crystal and is caused by mosaic-like structure only. (C) 2001 Elsevier Science Ltd. All rights reserved.