AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the true EA of wurtzite AlN. (C) 2001 American Institute of Physics.