期刊
SOLID-STATE ELECTRONICS
卷 45, 期 2, 页码 373-377出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(00)00234-3
关键词
-
Effects of direct tunneling and surface roughness on the capacitance-voltage characteristics of ultra-thin gate deep submicron MOS transistors have been studied. An improved equivalent circuit model to account for surface roughness and direct tunneling on the ultra-thin gate MOS capacitors in a unified manner is proposed. The capacitance subject to direct tunneling and surface roughness effect is smaller than that without surface roughness effect. (C) 2001 Elsevier Science Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据