期刊
SURFACE & COATINGS TECHNOLOGY
卷 136, 期 1-3, 页码 138-141出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0257-8972(00)01043-4
关键词
plasma immersion ion implantation; hydrogen plasma; layer transfer; silicon-on-insulator wafers; protonic mode
A plasma immersion ion implantation (PIII) system is described which provides the capability to bridge the range between research exploration and commercial applications for materials modification of electronic materials, with a particular focus on layer transfer processes. The Silicon Genesis PIII system is capable of operation at high plasma densities (approximate to 5 x 10(11) ions/cm(3) at the wafer) with high purity, mono-species ionization (> 99% H+ ions with a hydrogen plasma). The first generation of Silicon Genesis PIII systems is equipped to use 200-mm wafers (through an automated loadlock) and pulsed potentials up to 50 kV, Use of the mono-species ionization characteristic of the Silicon Genesis PIII system provides the capability to precisely vary the characteristics of surface layers through implantation of atoms and damage creation at well-controlled depths in the materials of choice. The Silicon Genesis PIII system is designed for efficient production of SOI and other layer transfer-generated materials and can be adapted for materials modification of more complex structures and work pieces. (C) 2001 Elsevier Science B.V. All rights reserved.
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