期刊
SYNTHETIC METALS
卷 117, 期 1-3, 页码 123-126出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0379-6779(00)00551-8
关键词
high-field and non-linear effect; fullerenes and related materials; localization effect (Anderson or weak localization)
The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I < 10 A) shows non-metallic negative d rho /dT from T = 1.4-300 K. Below T < 15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes. (C) 2001 Elsevier Science B.V. All rights reserved.
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