Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model

A phenomenological model of indium and gallium incorporation in InxGa1-xN thin films grown by molecular beam epitaxy is presented. The group III incorporation rates are hypothesized to vary as different powers of the respective metal surface concentrations. A self-blocking process by indium, such as indium droplet formation, is easily inserted into the model in a meaningful way. A two-parameter expression for x is derived and is in excellent quantitative agreement with experimental observations. Finally, there is evidence that suggests the surface lifetime of indium adatoms varies with substrate temperature as (665 degreesC-T-s)(1/2) for 600 degrees < T-s < 665 degreesC. (C) 2001 American Institute of Physics.