期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 73, 期 1, 页码 35-39出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-4005(00)00659-6
关键词
gas sensor; chalcogenide semiconductors; environmental monitoring
For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The sensitivity of this device depends on the gas concentration and it increases to lower concentrations less than 3 ppm. The response time is considerably short and in the range of 2-3 min. (C) 2001 Elsevier Science B.V. All rights reserved.
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