期刊
APPLIED PHYSICS LETTERS
卷 78, 期 9, 页码 1273-1275出版社
AMER INST PHYSICS
DOI: 10.1063/1.1348317
关键词
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Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. (C) 2001 American Institute of Physics.
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