Temperature dependent transport properties in GaN, A1xGa1-xN, and InxGa1-xN semiconductors

Ensemble Monte Carlo simulation is used to determine the electron saturation velocity and low-field mobility for AlxGa1-xN and InxGa1-xN. Acoustic phonon, optical phonon, intervalley, ionized impurity, alloy, and piezoelectric scattering are included in the simulation. Doping concentration ranging from 10(17) cm(-3) to 10(19) cm(-3) is considered in the temperature range of 50 K to 500 K, Theoretical calculation shows excellent agreement with low-field mobility experimental data. Empirical expressions for low field mobility and saturation velocity are provided as functions of temperature, doping concentration and mole fraction.