Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode

A transparent ZnO homostructural light-emitting diode (LED) with a structure of Au electrode/p(i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique of N2O plasma-enhanced pulsed laser reactive deposition. The contact between the p(i)-ZnO layer and n-ZnO wafer was found to exhibit nonlinear and rectifying current-voltage (I-V) characteristics. A current injection emission with bluish-white light was clearly observed at room temperature, and its intensity increased with increases in the injected electric current.