Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films

Dramatic dependence of dielectric properties on the pulsing frequency was found for titanium oxide films deposited using the pulsed de magnetron sputtering technique at room temperature. The frequency range studied was between 50 and 250 kHz by varying the oxygen pressure. A minimum leakage current density of 0.22 muA/cm(2) at 0.5 MV/cm electric-field strength for a film with dielectric constant of 26 was achieved for relative oxygen pressure P= 60% [P(%)= P(O2)/(P(O2) + P(Ar)] and frequency f= 200 kHz. (C) 2001 American Vacuum Society.